LDMOS（横向双扩散MOS）具有工作电压高、工艺相对简单、易于与常规工艺兼容等优点，因而它是高压功率集成电路中常用的高压器件。LDMOS结构设计的好坏将直接影响整个集成电路的性能。国外在这方面做了较深入的研究，而国内对于这方面的研究还处于起步阶段，无论是电气参数，还是可靠性等级水平方面均处明显的劣势。因此，研究设计实用并且性能好的LDMOS器件具有重要的意义。
    

本文基于一款荧光灯交流电子镇流器驱动芯片的高低压单片集成电路的功能及其对高压LDMOS器件的耐压要求,利用各种耐高压技术（包括隔离技术、结终端技术和RESURF技术），通过合理设计器件的结构、参数以及高压BCD工艺将此LDMOS器件与低压控制逻辑电路集成在同一芯片上。本文作者的主要工作可分为以下四个方面：Single RESURF LDMOS的优化设计；Double RESURF LDMOS的优化设计；设计芯片BCD工艺流程；实验流片及测试。
    

本论文工作的主要贡献在于自主设计了一款应用于实际芯片中的高压LDMOS器件，并且对RESURF LDMOS的击穿特性进行了系统的研究。研究结果与实际测试表明，高低压单片集成电路的LDMOS器件的性能不是各个参数性能的简单堆积，而是相互影响的，本文对高压LDMOS各个参数进行了综合分析，从而为设计更高耐压、更好性能的LDMOS提供了良好的基础。
    
     [英文摘要]：     

LDMOS（Lateral Double Diffused MOS）device were widely used as high-voltage devices in High-Voltage Power Integrated Circuits due to their merits such as high breakdown voltage,simple fabrication process and good compatibility.It is very important to design an appropriate structure of LDMOS for high voltage integrated circuits.Many other countries have made much effort to find out desire structure for LDMOS,but our country is still poor in this field.Therefore,the ability to design  a good performance LDMOS device for practical use is very significant.
    

As a need for high breakdown voltage for a new kind of driving circuit chip for fluorescent lamp ballast,we designed a high voltage LDMOS transistor in practical application by using various effective high voltage technologies.Our job can be divided into four aspects: Design and Optimization of Single RESURF LDMOS;Design and Optimization of Double RESURF LDMOS;Design BCD fabrication process for the chip;tape out and test.
    

At a conclusion ,We have succeeded in designing a high voltage LDMOS for a kind of actual chip uses by ourselves. We also have made a detail of investigation about breakdown characteristics for the RESURF LDMOS. The research results and chip testing indicate that the breakdown voltage of LDMOS is very sensitive to many parameters, and these parameters are  connected each other.The results of our research lay a solid foundation on designing a good high voltage LDMOS with higher breakdown voltage in the future.